Type of Document Master's Thesis Author Sathiaraj, Josephine Ratna Author's Email Address firstname.lastname@example.org, email@example.com URN etd-11072009-170319 Title Ternary To Binary Converter Design In CMOS Using Multiple Input Floating Gate MOSFETS Degree Master of Science (M.S.) Department Electrical & Computer Engineering Advisory Committee
Advisor Name Title Srivastava, Ashok Committee Chair Rai, Suresh Committee Member Skavantzos, Alexander Committee Member Keywords
- multivalued logic
- multiple input CMOS
- ternary to binary converter
- floating gate MOSFET
Date of Defense 2009-11-05 Availability unrestricted Abstract
In this work, a ternary to binary converter circuit is designed in 0.5μm n-well CMOS technology. The circuit takes two inputs corresponding to the ternary bits and gives four outputs, which are the binary equivalent bits of the ternary inputs. The ternary inputs range from (-1,-1)3 to (1,1) 3 which are decimal -4 to 4 and the four binary output bits are the sign bit (SB), most significant bit (MSB), second significant bit (SSB) and the least significant bit (LSB). The ternary inputs (-1, 0 and 1) are represented in terms of voltages of -3V, 0V and 3V.
Multiple input floating gate (MIFG) MOSFETS are used in the design of ternary to binary converter. The four circuits to generate the SB, MSB, SSB and LSB outputs are designed separately and then connected together to perform the entire conversion. The MIFG MOSFET takes multiple input signals, which are the ternary inputs in this case and calculates the weighted sum of the inputs. This weighted sum of the inputs is called floating gate voltage and is given as input to the CMOS inverter. The CMOS inverter gives a high or low binary output depending on if the floating gate voltage is higher or lower than the threshold voltage of the CMOS inverter.
The circuits are simulated using MOSIS BSIM level 7 model parameters. LEDIT version 13 is used for the layout and a total of 22 transistors are used in the design of the converter circuit. The floating gate of the transistor is simulated by not giving the input directly to the gate of the transistor. Instead inputs are fed to one end of the capacitors and the other end of the capacitors are tied together and given as an input to the inverter. The converter chip occupies an area of 1140 × 2090 μm2.
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