Title page for ETD etd-1011103-211310

Type of Document Master's Thesis
Author Srinivasan, Chandra
Author's Email Address csrini2@lsu.edu
URN etd-1011103-211310
Title Arithmetic Logic Unit (ALU) Design Using Reconfigurable CMOS Logic
Degree Master of Science in Electrical Engineering (M.S.E.E.)
Department Electrical & Computer Engineering
Advisory Committee
Advisor Name Title
Ashok Srivastava Committee Chair
Martin Feldman Committee Member
Subhash Kak Committee Member
  • multi-input floating gate MOSFET
  • capacitor
  • multivalued logic
  • multiplexer
Date of Defense 2003-09-30
Availability unrestricted
Using the reconfigurable logic of multi-input floating gate MOSFETs, a 4-bit

ALU has been designed for 3V operation. The ALU can perform four arithmetic and four

logical operations. Multi- input floating gate (MIFG) transistors have been promising in

realizing increased functionality on a chip. A multi- input floating gate MOS transistor

accepts multiple inputs signals, calculates the weighted sum of all input signals and then

controls the ON and OFF states of the transistor. This enhances the transistor function to

more than just switching. This changes the way a logic function can be realized.

Implementing a design using multi-input floating gate MOSFETs brings about reduction

in transis tor count and number of interconnections. The advantage of bringing down the

number of devices is that a design becomes area efficient and power consumption

reduces. There are several applications that stress on smaller chip area and reduced

power. Multi- input floating gate devices have their use in memories, analog and digital


In the present work we have shown successful implementation of multi- input

floating gate MOSFETs in ALU design. A comparison has been made between adders

using different design methods w.r.t transistor count. It is seen that our design,

implemented using multi-input floating gate MOSFETs, uses the least number of

transistors when compared to other designs. The design was fabricated using double

polysilicon standard CMOS process by MOSIS in 1.5mm technology. The experimental

waveforms and delay measurements have also been presented.

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